| PART |
Description |
Maker |
| NE76084S NE76084-T1 |
LOW NOISE L TO Ku BAND GaAs MESFET
|
NEC[NEC]
|
| NE76118_00 NE76118 NE76118-T1 NE76118-T2 NE7611800 |
GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
|
California Eastern Labs
Duracell
NEC[NEC]
|
| NE70000 NE70083 NE70083-4 |
80 GHz, low noise Ku-K band GaAs MESFET
|
NEC
|
| NJG1104KB2 |
800MHz BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NE3509M14 |
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NJG1129MD7 |
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NJG1140KA1 |
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NE3516S02-T1C-A NE3516S02-T1D-A NE3516S02-15 |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NE38018_00 NE38018 NE38018-TI-67 NE38018-TI-68 |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
|
NEC[NEC]
|
| NJG1107KB2 |
1.5/1.9GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
From old datasheet system
|
New Japan Radio
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| HMC341LC3B09 |
SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 21 - 29 GHz
21000 MHz - 29000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
